发明名称 |
Transistors with increased mobility in the channel zone and method of fabrication |
摘要 |
A semiconductor transistor structure with increased mobility in the channel zone and a method of its fabrication are described. A semiconductor substrate having a first dopant is formed. A diffusion barrier layer having a second dopant is formed on the semiconductor substrate to suppress outdiffusion of the first dopant. Next, a semiconductor layer having substantially low dopant concentration relative to the first layer is epitaxially grown on the diffusion barrier layer. The semiconductor layer defines a channel in the semiconductor transistor structure. The low dopant concentration in the semiconductor layer increases the mobility of the carriers in the channel of the semiconductor transistor structure. A gate electrode and a gate dielectric are formed on the semiconductor layer with the low dopant concentration.
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申请公布号 |
US7491988(B2) |
申请公布日期 |
2009.02.17 |
申请号 |
US20040880311 |
申请日期 |
2004.06.28 |
申请人 |
INTEL CORPORATION |
发明人 |
TOLCHINSKY PETER G.;BOHR MARK;YABLOK IRWIN |
分类号 |
H01L29/72;H01L21/336;H01L29/10;H01L29/51;H01L29/76;H01L29/786 |
主分类号 |
H01L29/72 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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