发明名称 |
Polysilicon semiconductor thin film substrate, method for producing the same, semiconductor device, and electronic device |
摘要 |
A semiconductor device and a method of manufacture thereof by forming an amorphous semiconductor film on the surface of an insulative substrate, and irradiating the amorphous semiconductor film with a laser beam to crystallize it to form a polycrystalline semiconductor thin film. A transistor is then formed in the polycrystalline semiconductor thin film. More specifically, a UV-ray is irradiated to the rear face of the insulative substrate or the amorphous semiconductor film to heat the amorphous semiconductor film to a melting temperature or lower. Then a laser beam at a suitable shape selection laser energy density Ec forms the crystal grains with the number of closest crystal grains of 6 most predominantly being irradiated to convert the amorphous semiconductor film into a polycrystalline semiconductor thin film. The thin film transistor formed in this structure has a high yield and is capable of high-speed operation.
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申请公布号 |
US7491972(B1) |
申请公布日期 |
2009.02.17 |
申请号 |
US20000019407 |
申请日期 |
2000.06.23 |
申请人 |
HITACHI, LTD. |
发明人 |
KIMURA YOSHINOBU;KAMO TAKAHIRO;KANEKO YOSHIYUKI |
分类号 |
H01L21/00;H01L21/20;H01L21/336 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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