| 摘要 |
A manufacturing methods of soi substrate and semiconductor device is provided to realize high speed semiconductor by forming a large mono-crystal semiconductor through an ion injection exfoliation and the epitaxial growth. In a manufacturing method of soi substrate and semiconductor device, a first seed substrate(104) is arranged on the fixed substrate(102). A plurality of single crystalline semiconductor substrates is formed solidly and the second seed substrate(106) is arranged on the first seed substrate. Successive large area mono-crystalline semiconductor films(111,112) are formed through the ion injection exfoliation and the epitaxial growth. The large size mono-crystalline semiconductor film(113) is formed through the ion injection exfoliation on the glass substrates. The element isolation of the mono-crystalline semiconductor film is performed.
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