| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a plasma CVD apparatus or the like capable of confining plasma, and capable of suppressing the incorporation of particles into a film. <P>SOLUTION: The plasma CVD apparatus is provided with a pair of confronted electrodes 54, 56 to which high frequency voltage is applied, wherein a gaseous starting material is fed to a space between the electrodes 54, 56, and, further, a long-length flexible substrate 2 is fed to the longitudinal direction of the flexible substrate 2 along the surface of either electrode 54. A flow passage for gas exhausted from the space between the electrodes 54, 56 is provided with a plasma confinement member 58 forming a plurality of slits 58b through which gas passes, the plasma confinement member 58 has a plurality of plates 58a arranged opposite to each other and spaced at a prescribed interval in a direction crossed with the flowing direction of the gas, and the edge part 58d on the upstream side in the flowing direction of the gas in the plasma confinement member 58 formed by each plate 58a is tilted to the flowing direction of the gas flowing through the slits 58b when viewing from a direction perpendicular to the gas flow and parallel to the electrodes 54, 56. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
