MEMORY ELEMENT AND MEMORY DEVICE

摘要

This invention provides a resistance variation-type memory device which can improve the capability of retaining the resistance value of a stored state and an erased state. A memory layer (5) comprising a high-resistance layer (2) and an ion source layer (3) is provided between a lower electrode (1) and an upper electrode (4). The ion source layer (3) contains Al (aluminum) as an additive element together with an ion conductive material such as S (sulfur), Se (selenium), and Te (tellurium)(a chalcogenide element) and a metal element to be ionized such as Zr (zirconium). Since Al is contained in the ion source layer (3), an Al-containing high-resistance layer (an Al oxide) is formed on an anode electrode in the erasing operation. This can contribute to an improvement in retaining properties in the high-resistance state and, at the same time, can improve the operating speed.