| 摘要 |
In a process for producing a thin-film device, a thermal-buffer layer is formed over a substrate which contains a resin material as a main component, and a light-cutting layer is formed over at least a region of the substrate over which a non-monocrystalline film to be annealed is not to be formed, where the light-cutting layer prevents damage from short-wavelength light to the substrate by reducing a proportion of the short-wavelength light which reaches the substrate. Thereafter, the non-monocrystalline film which is to be annealed is formed in a pattern over the substrate having the thermal-buffer layer, and an inorganic film is formed by irradiating the non-monocrystalline film with the short-wavelength light so as to anneal the non-monocrystalline film.
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