| 发明名称 |
INTEGRATED CIRCUIT, MEMORY, METHOD OF MANUFACTURING MEMORY, METHOD OF MANUFACTURING MEMORY DEVICE, INTEGRATED CIRCUIT AND SYSTEM |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for increasing the storage density of an SONOS memory. <P>SOLUTION: FinFET SONOS memory cells are employed, and a first SONOS memory cell 136a and a second SONOS memory cell 136b are provided. The second memory cell 136b is stacked on the first memory cell 136a. <P>COPYRIGHT: (C)2009,JPO&INPIT |
| 申请公布号 |
JP2009027136(A) |
申请公布日期 |
2009.02.05 |
| 申请号 |
JP20080107882 |
申请日期 |
2008.04.17 |
| 申请人 |
QIMONDA AG |
发明人 |
HAPP THOMAS;PHILIPP JAN BORIS |
| 分类号 |
H01L21/8247;H01L27/10;H01L27/115;H01L29/786;H01L29/788;H01L29/792 |
主分类号 |
H01L21/8247 |
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