| 摘要 |
PROBLEM TO BE SOLVED: To precisely etch a polysilicon layer which is deposited by CVD or the like. SOLUTION: Before the polysilicon layer is deposited, the surface of a substrate 10 and the surface of a gate insulating film 12 formed over it are light-etched. By this, a damaged section and any smudge or the like are removed. So, adhesion property among the substrate 10 or the gate insulating film 12 and the polysilicon layer 2 is improved to prevent an etching liquid or the like from invading there. As a result, the amount of undercutting is reduced for improved precision in the etching. COPYRIGHT: (C)2005,JPO&NCIPI |
