| 摘要 |
A contact forming method of a semiconductor device is provided to use two insulating layers having different etch rates to form a contact hole where a width of an upper part is broader than a width of a lower part, thereby suppressing generation of a void within the contact during a contact forming process. A junction area(104) is formed by performing an ion injection process on a semiconductor substrate(100) in which a gate pattern(102) is formed. An SAC protective film(108) is formed on the overall structure including the junction area. First and second insulating layers(110,112) having different etch rates are successively laminated on the overall structure including the SAC protective film. The first and second insulating layers are etched to form a contact hole in which the SAC protective film of the junction area is exposed. The second insulating layer is etched to widen an opening of the contact hole. A dry etching process is performed to form a slope in an upper sidewall of the contact hole. A barrier film(118) is formed on the overall structure including the contact hole. The lower part of the barrier film and the SAC protective film of the junction area are successively etched to expose the junction area. A contact(120) is formed by filling the inside of the contact hole with conducting material.
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