发明名称 |
Thin film phase change memory cell formed on silicon-on-insulator substrate |
摘要 |
A memory cell includes a semiconductor feature and a phase change material. The semiconductor feature defines a groove that divides the semiconductor feature into a first electrode and a second electrode. The phase change material at least partially fills this groove and acts to electrically couple the first and second electrodes. At least a portion of the phase change material is operative to switch between lower and higher electrical resistance states in response to an application of a switching signal to at least one of the first and second electrodes. The semiconductor feature comprises silicon and the groove comprises at least one silicon sidewall with a substantially <111> crystal plane orientation.
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申请公布号 |
US7479671(B2) |
申请公布日期 |
2009.01.20 |
申请号 |
US20060511680 |
申请日期 |
2006.08.29 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BREITWISCH MATTHEW J.;LAM CHUNG HON;SCHROTT ALEJANDRO GABRIEL |
分类号 |
H01L27/148;H01L23/48;H01L23/52;H01L27/10;H01L29/00;H01L29/40;H01L29/73;H01L29/74;H01L29/768 |
主分类号 |
H01L27/148 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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