发明名称 GaN CRYSTAL
摘要 PROBLEM TO BE SOLVED: To clarify the relation among crystal growth conditions, crystal form, and whether crystal growth occurs or not and thereby enable the crystal growth of a group III nitride under practical crystal growth conditions. SOLUTION: In region A, a GaN crystal does not grow. In region B, a GaN crystal grows dominantly only on a seed crystal. In region C, a columnar GaN crystal grows dominantly. In region D, a platy GaN crystal grows dominantly. Here, dominantly means that most of the crystal grows in this form. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009007250(A) 申请公布日期 2009.01.15
申请号 JP20080234150 申请日期 2008.09.12
申请人 RICOH CO LTD 发明人 SARAYAMA SHOJI;IWATA HIROKAZU;YAMANE HISANORI;SHIMADA MASAHIKO;AOKI MASATAKA
分类号 C30B29/38;H01S5/323 主分类号 C30B29/38
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