ACTIVATED PLASMA PROCESSING APPARATUS

摘要

The activated plasma processing apparatus is provided to uniformly supply the plasma generation gas to the substrate and to improve the uniformity of the thin film. The plasma processing apparatus is connected with a plurality of plasma generation gas supply tubes(202) supplying the plasma generation gas. The manifold(220) is to keep the plasma generation gas. The shutter(210) and the RF antenna(107) are to seal the plasma generation gas at the manifold. A plurality of plasma generation gas introduction tubes(102) comprises the plasma generation part(110), DC bias generation unit(120), the first showerhead(130), the source/purge gas introduction portion(140), the second shower head(150).