发明名称 NON-VOLATILE MEMORY DEVICES AND SYSTEMS INCLUDING MULTI-LEVEL CELLS USING MODIFIED READ VOLTAGES AND METHODS OF OPERATING THE SAME
摘要 Methods of operating a multi-level non-volatile memory device can include accessing data, stored in the device, which is associated with read voltages and modifying the read voltages applied to a plurality of multi-level non-volatile memory cells to discriminate between states stored by the cells in response to a read operation to the multi-level non-volatile memory device. Related devices and systems are also disclosed.
申请公布号 US2009003057(A1) 申请公布日期 2009.01.01
申请号 US20080145279 申请日期 2008.06.24
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KANG DONG GU;LEE SEUNGJAE;CHAE DONGHYUK
分类号 G11C16/04;G11C16/06 主分类号 G11C16/04
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