发明名称 |
Apparatus for Plasma Processing a Substrate and a Method Thereof |
摘要 |
An apparatus for processing a substrate includes a pulsed power supply that generates a waveform having a first period with a first power level and a second period with a second power level. A plasma source generates a first plasma during the first period and a second plasma during the second period. The first plasma may have higher plasma density than the second plasma. A bias voltage power supply generates a bias voltage waveform at an output that is electrically connected to a platen which supports a substrate. The bias voltage waveform having a first voltage and a second voltage may be coupled to the substrate. The first voltage may have more negative potential than the second voltage.
|
申请公布号 |
US2009001890(A1) |
申请公布日期 |
2009.01.01 |
申请号 |
US20080098781 |
申请日期 |
2008.04.07 |
申请人 |
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. |
发明人 |
SINGH VIKRAM;MILLER TIMOTHY J.;LINDSAY BERNARD G. |
分类号 |
H05H1/46 |
主分类号 |
H05H1/46 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|