发明名称 Apparatus for Plasma Processing a Substrate and a Method Thereof
摘要 An apparatus for processing a substrate includes a pulsed power supply that generates a waveform having a first period with a first power level and a second period with a second power level. A plasma source generates a first plasma during the first period and a second plasma during the second period. The first plasma may have higher plasma density than the second plasma. A bias voltage power supply generates a bias voltage waveform at an output that is electrically connected to a platen which supports a substrate. The bias voltage waveform having a first voltage and a second voltage may be coupled to the substrate. The first voltage may have more negative potential than the second voltage.
申请公布号 US2009001890(A1) 申请公布日期 2009.01.01
申请号 US20080098781 申请日期 2008.04.07
申请人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. 发明人 SINGH VIKRAM;MILLER TIMOTHY J.;LINDSAY BERNARD G.
分类号 H05H1/46 主分类号 H05H1/46
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