发明名称 |
MEMORY CELL THAT EMPLOYS A SELECTIVELY DEPOSITED REVERSIBLE RESISTANCE-SWITCHING ELEMENT AND METHODS OF FORMING THE SAME |
摘要 |
In some aspects, a method of forming a memory cell is provided that includes (1) forming a first conductor above a substrate; (2) forming a diode above the first conductor; (3) forming a reversible resistance-switching element above the first conductor using a selective deposition process; and (4) forming a second conductor above the diode and the reversible resistance-switching element. Numerous other aspects are provided.
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申请公布号 |
US2009001345(A1) |
申请公布日期 |
2009.01.01 |
申请号 |
US20070772090 |
申请日期 |
2007.06.29 |
申请人 |
SCHRICKER APRIL;HERNER BRAD;KONEVECKI MICHAEL W |
发明人 |
SCHRICKER APRIL;HERNER BRAD;KONEVECKI MICHAEL W. |
分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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