Semiconductor memory cell with a ferroelectric capacitor and method for fabricating the same

摘要

A semiconductor memory device comprises: a first interlayer insulating film (5) formed on a semiconductor substrate; a capacitor formed above the first interlayer insulating film (5) and composed of a lower electrode (13), a capacitor insulating film of a high dielectric film or a ferroelectric film (16), and an upper electrode (17); a second interlayer insulating film (19,21) formed over the first interlayer insulating film (5) to cover the capacitor; a first contact plug (9,9a,9b,9c) formed in the first interlayer insulating film to penetrate the first interlayer insulating film (5); and a second contact plug (22a,22b,22c) formed in the second interlayer insulating film (19,21) to penetrate the second interlayer insulating film (19,21) to make connection to the first contact plug. Between the first and second contact plugs, a first oxygen barrier film (11,11a,11b,11c) is interposed to come into contact with part of the boundary area between the first and second interlayer insulating films.