发明名称 |
FERROELECTRICS RANDOM ACCESS MEMORY DEVICE AND BURST MODE OPERATION METHOD THEREOF |
摘要 |
A ferroelectric memory device and burst mode operation method thereof is provided to output a plate control signal disabling a plate line by including a plate control circuit. A ferroelectric memory device and burst mode operation method thereof comprises a memory cell array(30), a cell selector, and a plate control circuit(25). The memory cell array includes a plurality of word lines and a plurality of ferroelectric memory cells connected between a plate line and a bit line. The cell selector enables the word line and the plate line in response to an internal address signal and a plate control signal, and disables the word line after a predetermined time if the plate line is disabled. The plate control circuit outputs the plate control signal disabling the plate line if an external chip enable signal applied from outside is disabled. |
申请公布号 |
KR20080114267(A) |
申请公布日期 |
2008.12.31 |
申请号 |
KR20070063642 |
申请日期 |
2007.06.27 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, KANG WOON;MIN, BYUNG JUN;LEE, HAN JOO;JEON, BYUNG GIL |
分类号 |
G11C11/22 |
主分类号 |
G11C11/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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