| 摘要 |
A memory driving method using a memory cell, a bit line, and a word line and semiconductor memory device is provided to remember information by accumulating a majority carrier in a floating body of a field effect transistor. A memory driving method includes a memory cell(MC), a bit line(BLL0-BLLm and BLR0-BLRm), and a word line(WLL0-WLLn and WLR0-WLRn), and has a step for performing refresh operation to restore a damage of a first logic data of the memory cell and a damage of a second logic data of the memory cell. The number of carrier accumulated in a floating body of the memory cell which remembers the second logic data is smaller than the number of carrier accumulated in the floating body of the memory cell which remembers the first logic data. In refresh operation, the number of carrier injected to the floating body is more than the number of carrier emitted from the floating body if an electric potential of the floating body is bigger than a critical value, and the number of carrier injected to the floating body is smaller than the number of carrier emitted from the floating body if the electric potential of the floating body is smaller than the critical value.
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