| 摘要 |
A vapor-phase growth equipment and a growth method are provided to reduce generation and attach of particle as to the epitaxial growth of the semiconductor wafer. A vapor-phase growth equipment comprises a gas supply inlet(12), a exhaust pipe(14), a wafer holding member and a gas rectifying plate(13) in a reactor of the cylindrical shape. The gas supply part is positioned in the reactor upper part. The exhaust pipe is positioned in the reactor lower part. The wafer holding member sets up with placing on wafer. The gas rectifying plate is positioned between the wafer holding member and gas supply inlet. The clearance of the wafer holding member and gas rectifying plate is set up so that the gas for forming the epitaxial layer in wafer becomes the rectifying state on the wafer plane or the wafer holding member.
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