| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a new state detection method of a flash memory by which natural writing accuracy of the flash memory can be individually estimated to contribute to its quality control in a manufacturer shipment step and the whole writing accuracy of the flash memory and secular change (degradation) of a stored value can be known in a user usage step. <P>SOLUTION: Writing and erasing errors to a data written block and data erased block, respectively, are detected in a symbol unit in order of the physical block number by using firmware and the errors are totaled to calculate an SER (Symbol Error Rate) of the flash memory. <P>COPYRIGHT: (C)2009,JPO&INPIT |
