| 摘要 |
PURPOSE: To prevent excessive stresses from being applied to a semiconductor substrate by annealing the semiconductor substrate and forming second and third transistor areas of second conductive type on both sides of a first transistor area. CONSTITUTION: This transistor is provided with a semiconductor substrate 10 containing an element region having a first conductive type and a mesa area 44, in which a pattern is formed on the surface of an element region 30 containing a first transistor region, and a boundary of both sides is determined by second and third transistor regions having second conductive type. Further, the second and third transistor regions are separated from each other, and first and second regions 24 made of insulative substance for forming first and second grooves 22 and a region made of doped conductive substance for filling the grooves 22 and forming a conductive link to connect the second and third transistor regions and first and second layers made of conductive substance, are provided. Thus, a horizontal transistor in which stress has been improved can be obtained. |
