| 摘要 |
A contact chain structure for troubleshooting integrated circuits (1) of EPROM memories, of a type comprising cluster contacts (10) connecting metallization layers (11) to active areas (3) of the circuit (1), comprises a source-drain region (4) implanted centrally of each active area (3). Deposited over that region (4) is a gate region (7) which, on being biased, enables the conductive condition of the chain to be varied. |
