发明名称 METHOD OF ETCHING A SILICON-BASED MATERIAL
摘要 A method is described of selectively etching a silicon substrate in small local areas in order to form columns or pillars in the etched surface. The silicon substrate is held in an etching solution of hydrogen fluoride, a silver salt and an alcohol. The inclusion of the alcohol provides a greater packing density of the silicon columns.
申请公布号 EP1977443(A1) 申请公布日期 2008.10.08
申请号 EP20070704981 申请日期 2007.01.23
申请人 NEXEON LTD 发明人 GREEN, MINO;LIU, FENGMING
分类号 H01L21/306;H01M10/36 主分类号 H01L21/306
代理机构 代理人
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