Fabrication process of thin film transistor with phase-separated dielectric structure

摘要

An electronic device including in any sequence: (a) a semiconductor layer, and (b) a phase-separated dielectric structure comprising a lower-k dielectric polymer and a higher-k dielectric polymer, wherein the lower-k dielectric polymer is in a higher concentration than the higher-k dielectric polymer in a region of the dielectric structure closest to the semiconductor layer.