| 摘要 |
A method for manufacturing a capacitor is provided to form easily a parallel structure of the capacitor by using silicon nitride, etching selectively a contact hole, and performing a photolithography process. A stacked structure of a first conductive layer, a first dielectric layer(12), and a second conductive layer is formed on a semiconductor substrate(1). A first and second electrodes are formed by etching the stacked structure. A second dielectric layer(14) is formed on the entire surface of the first and second electrodes. An interlayer dielectric(15) is formed on the second dielectric layer. An electrode contact hole(16) and a conductive contact hole(17) are formed by etching selectively the interlayer dielectric and the second dielectric layer. A first contact hole(18) for connecting the electrode contact hole with the conductive contact hole and a second contact hole(19) formed within the conductive contact hole are formed.
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