发明名称 |
Power semiconductor device with a base region and method of manufacturing same |
摘要 |
A low on-state resistance power semiconductor device has a shape and an arrangement that increase the channel density and the breakdown voltage The power semiconductor device comprises a plurality of individual cells formed on a semiconductor substrate ( 62 ). Each individual cell comprises a plurality of radially extending branches ( 80 ) having source regions ( 37 ) within base regions ( 36 ). The plurality of individual cells are arranged such that at least one branch of each cell extends towards at least one branch of an adjacent cell and wherein the base region ( 36 ) of the extending branches merge together to form a single and substantially uniformly doped base region ( 36 ) surrounding drain islands ( 39 ) at the surface of the semiconductor substrate ( 62 ).
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申请公布号 |
US7432145(B2) |
申请公布日期 |
2008.10.07 |
申请号 |
US20040518158 |
申请日期 |
2004.12.10 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
REYNES JEAN-MICHEL;DERAM IVANA;FEYBESSE ADELINE |
分类号 |
H01L21/337;H01L29/06;H01L29/78 |
主分类号 |
H01L21/337 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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