| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which the magnitude of ON current is assured, while assuring a high breakdown voltage at the junction of a first conductivity-type well region and a second conductivity type softening electric field region without increasing the chip size, and to provide its fabrication method. SOLUTION: An opposite conductivity-type region is provided in a lightly-doped region for softening the electric field. As a result concentration of the electric field in the vicinity of a trench corner is thereby relaxed, and the breakdown voltage can be improved. COPYRIGHT: (C)2008,JPO&INPIT
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