| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that hardly causes a wrong cutoff of fuse circuit at the time of its trimming. SOLUTION: The semiconductor device has a semiconductor substrate, an interlayer insulating film, a nitride film, a first redundant circuit having a first via plug running through the nitride film and the interlayer insulating film and a first fuse electrically connected to this first via plug, and a second redundant circuit having a second via plug running through the nitride film and the interlayer insulating film, wherein an oxide film is intermediate between the first via plug and the nitride film, and between the second via plug and the nitride film, respectively. COPYRIGHT: (C)2008,JPO&INPIT
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