OPTICAL PROXIMITY EFFECT CORRECTION METHOD, OPTICAL PROXIMITY EFFECT CORRECTION DEVICE, OPTICAL PROXIMITY EFFECT CORRECTION PROGRAM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, PATTERN DESIGN RESTRICTION DEVELOPING METHOD AND CALCULATION METHOD OF OPTICAL PROXIMITY EFFECT CORRECTION CONDITION

摘要

PROBLEM TO BE SOLVED: To provide an optical proximity effect correction capable of providing desired electric characteristics and, moreover, reducing a calculation load than heretofore.

SOLUTION: The optical proximity effect correction device includes: a means 11 of extracting the gate length distribution of a gate from a pattern shape of the gate of a transistor formed on a wafer and thereby specifying the electric characteristic on the gate; a means 12 of determining a gate length of the rectangular gate capable of obtaining an electric characteristic equivalent to the specified electric characteristic; a means 15 of calculating a correction coefficient for specifying the corresponding relation between the statistical value of the gate length distribution and the gate length of the rectangular gate; and a means 16 of extracting the gate length distribution of the gate of the transistor formed on the wafer by transfer of a design pattern, calculating the representative value of the gate length distribution from the statistical value of the gate length distribution by using the correction coefficient, and performing pattern correction for the design pattern such that the representative value of the gate length distribution becomes a specification value.

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