| 摘要 |
A radio frequency (RF) circuit ( 100 ) as disclosed herein is fabricated on a substrate ( 204, 304 ) using integrated passive device (IPD) process technology. The RF circuit ( 100 ) includes an RF inductor ( 200, 300 ) and an integrated inductive RF coupler ( 202, 302 ) located proximate to the RF inductor ( 200, 300 ). The inductive RF coupler ( 202, 302 ), its output and grounding contact pads, and its transmission lines are fabricated on the same substrate ( 204, 304 ) using the same IPD process technology. The inductive RF coupler ( 202, 302 ) includes a coupling section ( 212, 306 ) that is either located inside or outside a spiral of the RF inductor ( 200, 300 ). The inductive RF coupler ( 202, 302 ) and the RF inductor ( 200, 300 ) are cooperatively configured to function as the windings of an RF transformer, thus achieving the desired coupling. The inductive RF coupler ( 202, 302 ) provides efficient and reproducible RF coupling without increasing the die footprint of the RF circuit ( 100 ).
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