发明名称 METHOD OF PERFORMING A DOUBLE-SIDED PROCESS
摘要 A method of performing a double-sided process is provided. First, a wafer having a structural pattern disposed on the front surface is provided. Following that, a plurality of front scribe lines are defined on the structural pattern, and a filling layer is filled into the front scribe lines. Subsequently, the structural pattern is bonded to a carrier wafer with a bonding layer, and a plurality of back scribe lines are defined on the back surface of the wafer. Finally, the filling layer filled in the front scribe lines is removed.
申请公布号 US2007111472(A1) 申请公布日期 2007.05.17
申请号 US20060277350 申请日期 2006.03.23
申请人 YANG CHEN-HSIUNG 发明人 YANG CHEN-HSIUNG
分类号 H01L21/76;H01L21/30 主分类号 H01L21/76
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