| 摘要 |
PROBLEM TO BE SOLVED: To suppress a decrease in the withstand voltage of a capacitor in a thin film device comprising the capacitor and a increase in variation in the withstand voltage of the capacitor among products. SOLUTION: The thin film device 1 comprises a substrate 2, and the capacitor 3 provided on this substrate 2. The capacitor 3 has a lower conductor layer 10 formed on the substrate 2, a dielectric film 20 formed on the lower conductor layer 10, and an upper conductor layer 30 formed on this dielectric film 20. The thickness of the dielectric film 20 is in a range of 0.02-1μm, and is smaller than the thickness of the lower conductor layer 10. The maximum height roughness of the upper surface of the lower conductor layer 10 is not greater than a range in the thickness of the dielectric film 20. COPYRIGHT: (C)2007,JPO&INPIT |
