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发明名称
A method for forming vertical channel of MOS transistor
摘要
申请公布号
KR100594218(B1)
申请公布日期
2006.07.03
申请号
KR20000029304
申请日期
2000.05.30
申请人
发明人
分类号
H01L21/8238
主分类号
H01L21/8238
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