| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device wherein a capacity among wiring portions is reduced and the dispersion of wiring metal to a low dielectric-constant film is prevented in a wiring structure having a combination of copper wiring and a low dielectric-constant interlayer insulating film, and to provide its manufacturing method. SOLUTION: The semiconductor device is provided with a first low dielectric-constant film 1 provided with a first recess 1a; a first barrier metal layer 2 provided with a second recess 2b that is formed on the wall and the bottom of the first recess 1a and whose upper part is projected over the upper surface of the first low dielectric-constant film 1; a first wiring 3 formed inside the second recess 2b; and a second barrier metal layer 4 which is selectively formed on the side wall of a part projecting over the upper surface of the first wiring 3, the upper surface of the first barrier metal layer 2, and the upper surface of the first low dielectric-constant film 1 in the first barrier metal layer 2 so that it may cover a part projecting over the first low dielectric-constant film 1 in the first wiring 3 and the first barrier metal layer 2. COPYRIGHT: (C)2006,JPO&NCIPI
|
