<p>A method of forming a Si strained layer 16 on a Si substrate 10 includes forming a first SiGe buffer layer 12 on the Si substrate 10. Then, the first SiGe buffer layer is implanted with an amorphising implant to render the first SiGe buffer layer amorphous using ion implantation. A second SiGe buffer layer 14 is grown on the first SiGe buffer layer after annealing. This produces a relaxed SiGe layer 12, 14. Then, the strained layer of Si 16 is grown.</p>
申请公布号
WO2006048800(A1)
申请公布日期
2006.05.11
申请号
WO2005IB53523
申请日期
2005.10.28
申请人
KONINKLIJKE PHILIPS ELECTRONICS N.V.;PAWLAK, BARTLOMIEJ, J.;MEUNIER-BEILLARD, PHILIPPE