| 摘要 |
An integrated circuit structure and a method of manufacturing, wherein the method comprises forming a first via in an interconnect layer of the substrate, wherein the first via comprises a first size diameter; and forming a second via in the interconnect layer, wherein the second via comprises a second size diameter, the second size diameter being dimensioned larger than the first size diameter, wherein the second via comprises a non-uniform circumference, and wherein the substrate is configured in an approximately 1:1 ratio (i.e., approximately equal number) of the first and second vias. The first and second vias are laser formed or are formed by any of mechanical punching and photolithography. The second via is formed by sequentially forming multiple partially overlapping vias dimensioned and configured with the first size diameter. The first and second vias are arranged in a grid to allow for wiring of electronic devices. |
