| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate treatment method and a substrate treatment device capable of quickening the stripping rate of a resist film or the like, and to provide a computer program for performing the substrate treatment method. SOLUTION: The substrate treatment method for eliminating the resist film from a wafer W provided with a resist film comprises the following processes: a process 2 of at first storing the wafer W provided with the resist film into a chamber 30 and keeping the chamber 30 at a prescribed temperature; a process 3 of subsequently stopping the supply of nitrogen gas into the chamber 30 and supplying ozone; a process 4 of further supplying ozone and, at the same time, supplying water vapor; and a process 5 of thereafter supplying water vapor into the chamber 30, at the same time, periodically stopping the supply of ozone into the chamber 30 so as not to cause dew condensation in the chamber 30 and, thereby, creating the state of a large amount of water vapor within the chamber 30. As the result, the resist film may be modified. Thereafter, the modified resist film is dissolved and eliminated by using pure water or an alkaline aqueous solution. COPYRIGHT: (C)2006,JPO&NCIPI |
