| 摘要 |
The semiconductor device of the present invention and the method of the present invention, for forming the semiconductor device, form: a penetrating hole in a semiconductor wafer which has a first insulating film and an electrode pad formed on a first face of the semiconductor wafer, the penetrating hole being immediately below the electrode pad; and a second insulating film on an inner wall of the penetrating hole and on a second face of the semiconductor wafer. In forming the second insulating film, electrodeposition using the semiconductor wafer as a cathode is used. After the second insulating film is formed, the first insulating film is etched using the second insulating film as a mask, the back face of the electrode pad is exposed, and a conductor layer, acting as a penetrating electrode, is formed in the penetrating hole. |
