| 摘要 |
A method for forming cobalt silicide of a semiconductor device is provided to reduce sheet resistance and obtain a thermally stable state by forming a cobalt layer made of CoSi2. An oxide layer and a cobalt layer are sequentially stacked on a semiconductor substrate(100). The oxide layer reacts with the cobalt layer to form a mono silicide layer by a first heat treatment process. The mono silicide layer is made of a cobalt silicide layer(103) by a second heat treatment process. The cobalt silicide layer can be made of CoSi2. The second heat treatment process can be performed by an ex-situ method.
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