| 摘要 |
A substrate processing apparatus, a substrate processing method and a recording medium are provided to heat and cool a wafer quickly by removing an oxide layer on a surface of a wafer through a chemical process and thermal treatment in a process chamber. A substrate processing apparatus removing an oxide layer on a surface of a substrate(W) through chemical process and heat treatment comprises a gas supply mechanism(100), a first temperature adjusting member(80), and a second temperature adjusting member(75). The gas supply mechanism supplies gas containing a halogen element and basic gas into a process chamber(41). Both first temperature adjusting member and second temperature adjusting member adjust temperature of the substrate in the process chamber. The second temperature adjusting member adjusts the temperature of the substrate to a higher temperature than the first temperature adjusting member.
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