| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a p-type Mg metallic compound (Mg<SB>2</SB>X) excellent in conductivity, and to provide a device using the same. <P>SOLUTION: In the general formula: Mg<SB>2</SB>X that has an inverse fluorite structure (wherein: X is a kind or a plurality of group IV elements), the intermetallic compound contains at least two kinds of acceptor dopants, at least one of which forms a shallow impurity level AL2 near a valence band and at least the other of which forms an impurity level AL1 deeper than the acceptor dopant formed near the valence band. A conduction electron which is formed to a deep donor level DL by a native defect when no element is added, and is captured by a hole formed to a deep impurity level, thereby becoming a p-type. Furthermore, the conduction electron has high conductivity because the hole formed to the shallow impurity level becomes a carrier. <P>COPYRIGHT: (C)2008,JPO&INPIT |
