| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a high energy efficiency solar cell based on an inverted metamorphic structure with an integrated bypass diode. <P>SOLUTION: A method of forming a semiconductor structure which includes a multijunction solar cell with an upper subcell, a middle subcell, and a lower subcell, comprises steps for providing a first substrate for the epitaxial growth of a semiconductor material; forming a first solar subcell with a first band gap on the substrate; forming a second solar subcell with a second band gap smaller than the first band gap over the first subcell; forming a grading interlayer with a third band gap larger than the second band gap over the second subcell; and forming a third solar subcell with a fourth band gap smaller than the second band gap so that the third subcell is lattice-mismatched with respect to the second subcell. A bypass diode is further provided in the semiconductor structure, and a region of the first polarity of the solar cell is connected to a region of the second polarity of the bypass diode. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
