METHOD OF PROGRAMMING IN NONVOLATILE MEMORY DEVICE, AND NONVOLATILE MEMORY DEVICE APPLYING THIS PROGRAM

摘要

PROBLEM TO BE SOLVED: To provide a method of programming in a nonvolatile memory device, and a nonvolatile memory device in which reduction of program disturbance of a memory cell can be expected without increasing a programming time.

SOLUTION: When programming is performed in the nonvolatile memory device in which at least one or more pulses are applied successively to a selection word line, pre-charge voltage is applied to an even bit line and an odd bit line so that pre-charge voltage and boost voltage being higher than this pre-charge voltage are charged alternately. Bit line voltage to which the bit value of entered data corresponds is applied to a selection bit line out of these even bit line and odd bit line. By this method, program disturbance can be reduced while preventing delay of a programming time.

COPYRIGHT: (C)2008,JPO&INPIT