发明名称 |
METHOD FOR MANUFACTURING PZT THIN FILM, BAW RESONATOR, AND UWB FILTER USING THE RESONATOR |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a PZT thin film, by which a PZT thin film high in orientation can be easily manufactured, a low cost BAW resonator having the PZT thin film high in orientation as a piezoelectric thin film, and a filter for UWB using the resonator. <P>SOLUTION: In the manufacturing of the PZT thin film 30a, the PZT thin film 30a is formed through crystal growth by a sputtering method comprising irradiating the outermost surface Sur being a growth surface on the main surface side of a substrate 1 for crystal growth with an electron beam emitted from an electron gun 2. Thereby, the PZT thin film 30a which is high in orientation and in which the direction of spontaneous polarization is made uniform can be formed through crystal growth by the interaction between the electric field caused by electrons 4 in the vicinity of the outermost surface Sur and the spontaneous polarization of PZT particles 3 sputtered toward the outermost surface Sur during crystal growth. If the method for manufacturing the PZT thin film 30a is utilized as a method for forming a piezoelectric thin film for the BAW resonator, the BAW resonator and the filter for UWB can be obtained at low cost. <P>COPYRIGHT: (C)2008,JPO&INPIT |
申请公布号 |
JP2008184629(A) |
申请公布日期 |
2008.08.14 |
申请号 |
JP20070017074 |
申请日期 |
2007.01.26 |
申请人 |
MATSUSHITA ELECTRIC WORKS LTD |
发明人 |
SHIRAI TAKEO;HAYAZAKI YOSHIKI;MATSUSHIMA CHOMEI;SI-BEI XIONG;YOSHIHARA TAKAAKI;YAMAUCHI NORIHIRO |
分类号 |
C23C14/22;C23C14/08;C23C16/48;H01L41/09;H01L41/18;H01L41/22;H01L41/316;H01L41/39;H03H3/02;H03H9/17;H03H9/54 |
主分类号 |
C23C14/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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