SILICON NITRIDE FILM, AND NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a silicon nitride film having excellent charge-storage performance effective as a charge storage layer for a semiconductor memory device. SOLUTION: The silicon nitride film has high charge-storage performance, wherein the film has a trap density substantially uniform in the film thickness direction. The silicon nitride film is formed by using a plasma processing apparatus 100 which introduces a microwave into a chamber 1 through a flat antenna 31 having a plurality of holes, introduces a material gas that contains a nitrogen containing compound and a silicon containing compound into the chamber 1, generates plasma by the microwave, and forms the silicon nitride film by plasma CVD which deposits the silicon nitride film by the plasma on the surface of an object to be processed. COPYRIGHT: (C)2009,JPO&INPIT