发明名称 LITHIUM ALUMINATE SUBSTRATE STRUCTURE WITH ZINC OXIDE BUFFER LAYER
摘要 <P>PROBLEM TO BE SOLVED: To provide a lithium aluminate substrate structure with a zinc oxide buffer layer, in which quantum confined Stark effect can be eliminated and the light emitting efficiency of an optical element can be improved. <P>SOLUTION: Lithium aluminate is selected as a substrate and a zinc oxide buffer layer 22 being a single crystal film is grown on a lithium aluminate substrate 21. Thus, zinc oxide is directed in the same direction, lattice matching is obtained, and excellent crystal interface quality can be provided by growing non-polar zinc oxide on the substrate 21 and utilizing the similarity between their structures. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008297131(A) 申请公布日期 2008.12.11
申请号 JP20070141409 申请日期 2007.05.29
申请人 NATIONAL SUN YAT-SEN UNIV;SINO-AMERICAN SILICON PRODUCTS INC 发明人 SHU MEIKI;WU JIH-JEN;HSU WEN-CHING
分类号 C30B29/16;H01L33/04;H01L33/12;H01L33/28 主分类号 C30B29/16
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