| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for determining the uniformity of particle size in a semiconductor thin film used in melting and crystallizing the semiconductor thin film by radiating a laser beam onto a substrate having the semiconductor thin film on the surface. SOLUTION: A predetermined region where a polycrystalline thin film is formed is illuminated and at the same time light reflected from the predetermined region is received. Next, the predetermined region is divided into a plurality of first regions, the chromaticity of each of the first regions is measured based on the reflected light received, and the chromaticities measured in the first regions are compared with each other. Then the uniformity of particle size of the polycrystalline thin film is determined based on the compared result of the uniformity in chromaticity of the regions. COPYRIGHT: (C)2009,JPO&INPIT
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