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发明名称
蚀刻方法及该方法所用之蚀刻组成物
摘要
在以磷类化合物蚀刻氮化矽时,若进行蚀刻一段长时间,会倾向于沉淀出氧化矽,且不可能持续地实施长时间期的蚀刻。藉由使用包含磷化合物、硼化合物、矽化合物及/或彼等的氟化物之组成物对氮化矽的蚀刻方法,即使使用该组成物长时间也没有氧化矽的沉淀。特佳者为进一步添加硝酸及/或硝酸盐,从而增加选择率的稳定性。
申请公布号
TW200849371
申请公布日期
2008.12.16
申请号
TW097106654
申请日期
2008.02.26
申请人
东曹股份有限公司
发明人
原靖;下野哲数;高桥史治
分类号
H01L21/306(2006.01)
主分类号
H01L21/306(2006.01)
代理机构
代理人
林志刚
主权项
地址
日本
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