发明名称 |
HIGH PERFORMANCE CMOS DEVICES AND METHODS FOR MAKING SAME |
摘要 |
An integrated circuit having high performance CMOS devices with good short channel effects may be made by forming a gate structure over a substrate; forming pocket implant regions and source/drain extensions in the substrate; forming spacers along sides of the gate structure; and thermal annealing the substrate when forming the spacers, the thermal annealing performed at an ultra-low temperature. An integrated circuit having high performance CMOS devices with low parasitic junction capacitance may be made by forming a gate structure over a substrate; forming pocket implant regions and source/drain extensions in the substrate; forming spacers along sides of the gate structure; performing a low dosage source/drain implant; and performing a high dosage source/drain implant.
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申请公布号 |
US2008305590(A1) |
申请公布日期 |
2008.12.11 |
申请号 |
US20080191868 |
申请日期 |
2008.08.14 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
WANG CHIH-HAO;WANG TA-WEI;HU CHENMING |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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