发明名称 |
METHOD OF FABRICATING IMAGE DEVICE HAVING CAPACITOR AND IMAGE DEVICE FABRICATED THEREBY |
摘要 |
There are provided a method of fabricating an image device having a capacitor and an image device fabricated thereby. The method comprises preparing a substrate having a pixel region and a peripheral circuit region. A lower electrode containing silicon is formed on the substrate of the peripheral circuit region. A capacitor dielectric layer is formed by sequentially stacking a first dielectric layer and a second dielectric layer on the lower electrode, and the first dielectric layer and the second dielectric layer have a different dielectric constant from each other. In this case, one of the first and second dielectric layers is a dielectric layer grown from a material layer formed thereunder and has a lower dielectric constant than that of the other. An upper electrode is formed on the capacitor dielectric layer.
|
申请公布号 |
US2008305572(A1) |
申请公布日期 |
2008.12.11 |
申请号 |
US20080132542 |
申请日期 |
2008.06.03 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YOU YOUNG-SUB;YOO DAE-HAN;HYUNG YONG-WOO;HAN JAE-JONG;KIM BI-O;SON GIL-HWAN |
分类号 |
H01L31/18;H01L21/02 |
主分类号 |
H01L31/18 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|