发明名称 METHOD OF FABRICATING IMAGE DEVICE HAVING CAPACITOR AND IMAGE DEVICE FABRICATED THEREBY
摘要 There are provided a method of fabricating an image device having a capacitor and an image device fabricated thereby. The method comprises preparing a substrate having a pixel region and a peripheral circuit region. A lower electrode containing silicon is formed on the substrate of the peripheral circuit region. A capacitor dielectric layer is formed by sequentially stacking a first dielectric layer and a second dielectric layer on the lower electrode, and the first dielectric layer and the second dielectric layer have a different dielectric constant from each other. In this case, one of the first and second dielectric layers is a dielectric layer grown from a material layer formed thereunder and has a lower dielectric constant than that of the other. An upper electrode is formed on the capacitor dielectric layer.
申请公布号 US2008305572(A1) 申请公布日期 2008.12.11
申请号 US20080132542 申请日期 2008.06.03
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 YOU YOUNG-SUB;YOO DAE-HAN;HYUNG YONG-WOO;HAN JAE-JONG;KIM BI-O;SON GIL-HWAN
分类号 H01L31/18;H01L21/02 主分类号 H01L31/18
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